 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP9973M Advanced Power Electronics Corp. Low Gate Charge Single Drive Requirement Surface Mount Package D1 G2 S2 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 80m 3.9A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 3 Rating 60 20 3.9 2.5 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 201029031 AP9973M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.06 3.5 8 2 4 8 4 20 6 700 80 50 Max. Units 80 100 3 1 25 100 13 1120 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.9A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=3.9A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS= 20V ID=3.9A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=3.9A, VGS=0V IS=3.9A, VGS=0V, dI/dt=100A/s Min. - Typ. 28 35 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. AP9973M 40 30 35 T A =25 o C ID , Drain Current (A) 30 ID , Drain Current (A) 10V 6.0V 5.0V 4.5V 25 T A =150 o C 10V 6.0V 5.0V 4.5V 20 25 20 15 15 10 10 5 V G =3.0V 5 V G =3.0V 0 0 1 2 3 4 5 6 7 8 0 0 1 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 95 2.5 I D =3.9A 90 I D =3.9A 2.0 T A =25 C Normalized RDS(ON) o V G =10V 85 RDS(ON) (m ) 1.5 80 1.0 75 0.5 70 3 5 7 9 11 0.0 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 4 3 2 2 VGS(th) (V) 1.4 IS(A) o T j =150 C T j =25 o C 1.5 1 1 0 0.5 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9973M 14 10000 f=1.0MHz I D =3.9A 12 VGS , Gate to Source Voltage (V) 10 V DS =48V V DS =38V V DS =30V C (pF) 1000 8 Ciss 6 100 4 Coss Crss 2 0 0 5 10 15 20 25 30 35 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thja) Duty factor=0.5 10 0.2 0.1 0.1 0.05 ID (A) 1 1ms 10ms 0.02 PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135/W 0.01 0.01 Single Pulse 0.1 T A =25 C Single Pulse 0.01 0.1 1 10 100 o 100ms 1s DC 0.001 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
Price & Availability of AP9973M
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |